Datasheet Details
| Part number | CS60N06AQ3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 1.82 MB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CS60N06AQ3-HuajingMicroelectronics.pdf |
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Overview: Silicon N-Channel Power Trench MOSFET CS60N06 AQ3 ○R General.
| Part number | CS60N06AQ3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 1.82 MB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | CS60N06AQ3-HuajingMicroelectronics.pdf |
|
|
|
： CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is PDFN5×6, which accords with the RoHS standard.
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