Datasheet Summary
Silicon N-Channel Power Trench MOSFET CS60N06 AQ3
○R
General Description：
CS60N06 AQ3, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN5×6, which accords with the RoHS standard.
Features
： l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of...