CS60N06 Description
The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
CS60N06 Key Features
- VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Table 1