The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
| Part number | CS60N06 |
|---|---|
| Manufacturer | CASS |
| File Size | 661.27 KB |
| Description | N-Channel Trench Power MOSFET |
| Datasheet |
 CS60N06 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| CS60N06AQ3 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| CS60N06C4 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| CS60N03AQ4-G | Silicon N-Channel Power MOSFET | CR Micro |
| CS60N04A4 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
| CS60N12A8 | Silicon N-Channel Power MOSFET | CR Micro |
| Part Number | Description |
|---|---|
| CS60N06A | N-Channel Trench Power MOSFET |
| CS64N12 | N-Channel Trench Power MOSFET |
| CS64N18 | N-Channel Trench Power MOSFET |
| CS64N90 | N-Channel Trench Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
