CASS CS60N06
The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | CS60N06 |
|---|---|
| Datasheet | CS60N06 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.FEATURES
● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CS60N06 To-220 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS60N06 CS60N06 TO-220 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Po
