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LBAS16TT3G, LBAS16TT1G Silicon Switching Diode

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Description

LESHAN RADIO COMPANY, LTD.Silicon Switching Diode .

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This datasheet PDF includes multiple part numbers: LBAS16TT3G, LBAS16TT1G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
LBAS16TT3G, LBAS16TT1G
Manufacturer
Leshan Radio Company
File Size
221.08 KB
Datasheet
LBAS16TT1G-LeshanRadioCompany.pdf
Description
Silicon Switching Diode
Note
This datasheet PDF includes multiple part numbers: LBAS16TT3G, LBAS16TT1G.
Please refer to the document for exact specifications by model.

Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS16TT1G S-LBAS16TT1G MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded

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