LBC847AWT1G, LBC846AWT1G Datasheet - Leshan Radio Company

LBC847AWT1G - General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION ( Pb Free ) Device LBC846AWT1G S-LBC846AWT1G LBC846AWT3G S-LBC846AWT3G Package SC-70 SC-70 Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS LBC846AWT1G,BWT1G LBC847AWT1G,BWT.

LBC847AWT1G Features

* RENT (A) Figure 25. DC Current Gain vs. Collector Current 1 1.1 1.0 IC/IB = 20 0.9 0.8 0.7 0.6

* 55°C 25°C 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current VCE(sat), COLLECTOR

* EMITTER SA

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