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LBC847BWT1G

General Purpose Transistors

LBC847BWT1G Features

* RENT (A) Figure 25. DC Current Gain vs. Collector Current 1 1.1 1.0 IC/IB = 20 0.9 0.8 0.7 0.6

* 55°C 25°C 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current VCE(sat), COLLECTOR

* EMITTER SA

LBC847BWT1G Datasheet (394.62 KB)

Preview of LBC847BWT1G PDF

Datasheet Details

Part number:

LBC847BWT1G

Manufacturer:

Leshan Radio Company

File Size:

394.62 KB

Description:

General purpose transistors.
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Pre.

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LBC847BWT1G General Purpose Transistors Leshan Radio Company

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