* RENT (A) Figure 25. DC Current Gain vs. Collector Current 1 1.1 1.0 IC/IB = 20 0.9 0.8 0.7 0.6
* 55°C 25°C 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current VCE(sat), COLLECTOR
* EMITTER SA
LBC848BWT1G Datasheet (394.62 KB)
LBC848BWT1G
Leshan Radio Company
394.62 KB
General purpose transistors.
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Pre.
📁 Related Datasheet
LBC848BWT1 (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon (Leshan Radio Company)
LBC848BWT3G General Purpose Transistors (Leshan Radio Company)
LBC848BDW1T1 (LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals (Leshan Radio Company)
LBC848BDW1T1G Dual-Channel Transistor (Leshan Radio Company)
LBC848BLT1G General Purpose Transistors (Leshan Radio Company)
LBC848BLT3G General Purpose Transistors (Leshan Radio Company)
LBC848BPDW1T1 (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals (Leshan Radio Company)
LBC848BPDW1T1G Dual-Channel Transistor (Leshan Radio Company)
LBC848ALT1G General Purpose Transistors (Leshan Radio Company)
LBC848ALT3G General Purpose Transistors (Leshan Radio Company)
