* 1）hFE, 100
* 300 2）Low VCE(sat),≦0.4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces Component Count 6）We declare that the material of product compliant with RoHS requirements and Halogen Free. 7）S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
LMBT3906DW1T3G Datasheet (540.36 KB)
LMBT3906DW1T3G
Leshan Radio Company
540.36 KB
Pnp transistor.
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin
*off of our popular SOT
*23/S.
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