3N171 Datasheet, Mode, Linear Technology

3N171 Features

  • Mode Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Tempe

PDF File Details

Part number:

3N171

Manufacturer:

Linear Technology

File Size:

210.37kb

Download:

📄 Datasheet

Description:

N-channel mosfet enhancement mode.

Datasheet Preview: 3N171 📥 Download PDF (210.37kb)
Page 2 of 3N171

TAGS

3N171
N-CHANNEL
MOSFET
ENHANCEMENT
MODE
Linear Technology

📁 Related Datasheet

3N170 - N-Channel Enhancement Mode MOSFET Switch (Calogic LLC)
N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high inp.

3N170 - N-CHANNEL MOSFET ENHANCEMENT MODE (Linear Technology)
3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MA.

3N170 - (3N169 - 3N171) MOSFETs Switching (Motorola Semiconductor)
.. .. .

3N170 - High Speed Switch (Micross)
3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a Gene.

3N171 - (3N169 - 3N171) MOSFETs Switching (Motorola Semiconductor)
.. .. .

3N171 - High Speed Switch (Micross)
3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a Gene.

3N172 - Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch (Calogic LLC)
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode.

3N173 - Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch (Calogic LLC)
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode.

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

Stock and price

part
Amphenol Communications Solutions
METRAL SIGNAL HEADER-2 MOD 4ROW
DigiKey
70233-N171
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts