Datasheet Details
Part number:
LT1N60
Manufacturer:
Longtium Microelectronics
File Size:
388.49 KB
Description:
N-channel MOSFET
Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features High ruggedness RDS(ON) (Max 9 Ω)@VGS=10V Gate Charge (Max 6nC) Improved dv/dt Capability 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
This
LT1N60-LongtiumMicroelectronics.pdf
LT1N60, N-channel MOSFET
This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
This technology enable power MOSFET to have better characteristics, Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually use
LT1N60 Distributor
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