Datasheet4U Logo Datasheet4U.com

LT7N60

N-channel MOSFET

LT7N60 Features

*  High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such

LT7N60 General Description

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually use.

LT7N60 Datasheet (396.49 KB)

Preview of LT7N60 PDF

Datasheet Details

Part number:

LT7N60

Manufacturer:

Longtium Microelectronics

File Size:

396.49 KB

Description:

N-channel mosfet.

📁 Related Datasheet

LT7N60A N-channel MOSFET (Longtium Microelectronics)

LT700D LED (Seoul Semiconductor)

LT7170 Silent Switcher Step-Down Regulators (Analog Devices)

LT7170-1 Silent Switcher Step-Down Regulators (Analog Devices)

LT7200S Synchronous Monolithic Step-Down Regulator (Analog Devices)

LT73 Thermal Sensor (KOA)

LT73 Thermal Sensor / Circuit Protectors (KOA)

LT770D GREEN OVAL LAMP LED (Seoul Semiconductor)

LT7911D Type-C to Dual-port MIPI DSI/CSI (Lontium)

LT-1000-SI Current Transducer (ETC)

TAGS

LT7N60 N-channel MOSFET Longtium Microelectronics

Image Gallery

LT7N60 Datasheet Preview Page 2 LT7N60 Datasheet Preview Page 3

LT7N60 Distributor