LT7N60 Datasheet, Mosfet, Longtium Microelectronics

LT7N60 Features

• Mosfet  High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with adv

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LT7N60

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Longtium Microelectronics

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📄 Datasheet

Description:

N-channel mosfet.  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better ch

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LT7N60

Longtium Microelectronics

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