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LT7N60A

N-channel MOSFET

LT7N60A Features

*  High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such

LT7N60A General Description

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually use.

LT7N60A Datasheet (396.49 KB)

Preview of LT7N60A PDF

Datasheet Details

Part number:

LT7N60A

Manufacturer:

Longtium Microelectronics

File Size:

396.49 KB

Description:

N-channel mosfet.

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LT7N60A N-channel MOSFET Longtium Microelectronics

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