LSB11N65E

N-channel 650V Power MOSFET

LSB11N65E Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 34nC)

* High body diode ruggedness

* Easy to use

* 100% UIS tested

* RoHS compliant TO-251 TO-252,TO-263 TO-220 TO-220MF TO-247 TO-262 Applications D

* PFC stages, hard switching PWM stages and resonant switchi

LSB11N65E General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.40Ω.

LSB11N65E Datasheet (1.30 MB)

LSB11N65E Datasheet Preview — Preview of LSB11N65E PDF

Datasheet Details

Part number:

LSB11N65E

Manufacturer:

Lonten

File Size:

1.30 MB

Description:

N-channel 650v power mosfet.

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LSB11N65E N-channel 650V Power MOSFET Lonten

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LSB11N65E Features

LSB11N65E General Description

Datasheet Details

File Size:

Description:

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