LSB20N65

N-channel MOSFET

LSB20N65 Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 65nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltag

LSB20N65 General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.15Ω.

LSB20N65 Datasheet (661.70 KB)

LSB20N65 Datasheet Preview — Preview of LSB20N65 PDF

Datasheet Details

Part number:

LSB20N65

Manufacturer:

Lonten

File Size:

661.70 KB

Description:

N-channel mosfet.

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LSB20N65 N-channel MOSFET Lonten

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LSB20N65 Features

LSB20N65 General Description

Datasheet Details

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Description:

LSB20N65 Distributor