LSB20N65 - N-channel MOSFET

Datasheet Details

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

Ultra low RDS(on).
Ultra low gate charge (typ. Qg = 65nC).
100% UIS tested.
RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Co.

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Published: Mar 30, 2021 |