1N5711 Datasheet, Diodes, M-Pulse Microwave

1N5711 Features

• Diodes Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents ENVIRONMENTAL RATINGS (Maximum) Operating Temperature. - - - - - - - -65°C to+200°C Storage Temperature - - - - - -

PDF File Details

Part number:

1N5711

Manufacturer:

M-Pulse Microwave

File Size:

281.46kb

Download:

📄 Datasheet

Description:

General purpose schottky diodes.

1N5711 Application

• Applications Data 100 10,000 150 C 125 C 10 1000 100 C -50 C 1.0 0 C 100 25 C 75 C 50 C 25 C 1 50 C 10 100 C 150 C .01 0 .2 .4 .6 .8 1.0 1

TAGS

1N5711

M-Pulse Microwave

📁 Related Datasheet

1N5711 - SMALL SIGNAL SCHOTTKY DIODE (STMicroelectronics)
® 1N 5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch.

1N5711 - SCHOTTKY BARRIER SWITCHING DIODE (Diodes Incorporated)
1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring.

1N5711 - Schottky Barrier Switching Diode (Micro Commercial Components)
MCC Features l l l l Fast Switching Speed
     omponents 21201 Itasca Street Chatsworth  # $ % .

1N5711 - SCHOTTKY BARRIER DIODES (Microsemi Corporation)
• 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED .

1N5711 - Schottky Barrier Diodes (Avago)
1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications The 1N5711, 1N5712, 508.

1N5711 - SCHOTTKY RECTIFIERS (Digitron Semiconductors)
1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (hi.

1N5711 - Schottky Barrier Diodes (Agilent)
Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Features • Low Tur.

1N5711 - SCHOTTKY BARRIER DIODES (EIC)
1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN.

1N5711 - SMALL SIGNAL SCHOTTKY DIODES (JINAN JINGHENG ELECTRONICS)
R SEMICONDUCTOR FEATURES For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard .

1N5711 - Schottky Diodes (Vishay)
VISHAY Schottky Diodes 1N5711 / 1N6263 Vishay Semiconductors Features • For general purpose applications • Metal-on-silicon Schottky barrier device .