1N5711

Schottky Barrier Diodes

Avago

1N5711 Features

* Low Turn-On Voltage As Low as 0.34 V at 1 mA

* Pico Second Switching Speed

* High Breakdown Voltage Up to 70 V

* Matched Characteristics Available Outline 15 0.41 (.016)

* 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range 1N5711, 1N

1N5711 General Description

Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting.

1N5711 Datasheet (216.30 KB)

1N5711 Datasheet Preview — Preview of 1N5711 PDF

Datasheet Details

Part number:

1N5711

Manufacturer:

Avago

File Size:

216.30 KB

Description:

Schottky barrier diodes.

📁 Related Datasheet

1N5711 SMALL SIGNAL SCHOTTKY DIODE (STMicroelectronics)

1N5711 SCHOTTKY BARRIER SWITCHING DIODE (Diodes Incorporated)

1N5711 Schottky Barrier Switching Diode (Micro Commercial Components)

1N5711 SCHOTTKY BARRIER DIODES (Microsemi Corporation)

1N5711 SCHOTTKY RECTIFIERS (Digitron Semiconductors)

1N5711 General Purpose Schottky Diodes (M-Pulse Microwave)

1N5711 Schottky Barrier Diodes (Agilent)

1N5711 SCHOTTKY BARRIER DIODES (EIC)

1N5711 SMALL SIGNAL SCHOTTKY DIODES (JINAN JINGHENG ELECTRONICS)

1N5711 Schottky Diodes (Vishay)

TAGS

1N5711 Schottky Barrier Diodes Avago

Image Gallery

1N5711 Features

1N5711 General Description

Datasheet Details

File Size:

Description:

1N5711 Distributor