1N5711 Datasheet (Avago) - Schottky Barrier Diodes

1N5711, Schottky Barrier Diodes

Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage.

Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting

1N5711 Features

* Low Turn-On Voltage As Low as 0.34 V at 1 mA

* Pico Second Switching Speed

* High Breakdown Voltage Up to 70 V

* Matched Characteristics Available Outline 15 0.41 (.016)

* 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range 1N5711, 1N