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1N5712

Schottky Barrier Diodes

1N5712 Features

* Low Turn-On Voltage As Low as 0.34 V at 1 mA

* Pico Second Switching Speed

* High Breakdown Voltage Up to 70 V

* Matched Characteristics Available Outline 15 0.41 (.016)

* 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range   1N5711, 1N

1N5712 General Description

Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting.

1N5712 Datasheet (216.30 KB)

Preview of 1N5712 PDF

Datasheet Details

Part number:

1N5712

Manufacturer:

Avago

File Size:

216.30 KB

Description:

Schottky barrier diodes.

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1N5712 Schottky Barrier Diodes Avago

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