Description
1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet .
Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high bre.
Features
* Low Turn-On Voltage As Low as 0.34 V at 1 mA
* Pico Second Switching Speed
* High Breakdown Voltage Up to 70 V
* Matched Characteristics Available
Outline 15
0.41 (.016)
* 0.36 (.014)
Maximum Ratings
Junction Operating and Storage Temperature Range 1N5711, 1N