Part number:
1N5712
Manufacturer:
Agilent
File Size:
48.46 KB
Description:
Schottky barrier diodes.
* Low Turn-On Voltage As Low as 0.34 V at 1 mA
* Pico Second Switching Speed
* High Breakdown Voltage Up to 70 V
* Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patent
1N5712
Agilent
48.46 KB
Schottky barrier diodes.
📁 Related Datasheet
1N5711 SMALL SIGNAL SCHOTTKY DIODE (STMicroelectronics)
1N5711 SCHOTTKY BARRIER SWITCHING DIODE (Diodes Incorporated)
1N5711 Schottky Barrier Switching Diode (Micro Commercial Components)
1N5711 SCHOTTKY BARRIER DIODES (Microsemi Corporation)
1N5711 Schottky Barrier Diodes (Avago)
1N5711 SCHOTTKY RECTIFIERS (Digitron Semiconductors)
1N5711 General Purpose Schottky Diodes (M-Pulse Microwave)
1N5711 Schottky Barrier Diodes (Agilent)
1N5711 SCHOTTKY BARRIER DIODES (EIC)
1N5711 SMALL SIGNAL SCHOTTKY DIODES (JINAN JINGHENG ELECTRONICS)