Description
LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V .
Features
* N-Channel enhancement mode device
* DMOS structure
* Lower capacitances for broadband operation
* Common source configuration
* Lower noise floor
Applications
* Broadband linear operation 500 MHz to 1400 MHz
* RoHS Compliant
Absolute Maximum Ratings @ 25°C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65
