MT2301 - P-Channel Enhancement Mode MOSFET
MT2301 P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularl
MT2301 Features
* APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package design ¾ POWER Management in Note ¾ Portable Equipmen
