MX27517 - Single 4A Peak Current Low-Side Gate Driver
SOT23-6L Package dissipation rating Package SOT-23 (6) RθJA（℃/W） 108.1 Absolute maximum ratings Parameter VDD to GND IN+ to GND OUT to GND Junction temperature Storage temperature, Tstg Leading temperature （soldering，10secs） ESD Susceptibility HBM Value -0.3 to 20V -0.3 to 20V -0.3 to VDD+0.3V
MX27517 Features
* necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The MX27517 provides inverting and noninverting inputs to satisfy requirements for inverting and noninverting gate drive in a single device type. The inputs of the MX27517 are TTL/CMOS Logic compatible and withstand input volta
