SI2301
Features
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Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W ℃/W ℃ ℃
-20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1
P-Channel Enhancement Mode Field Effect Transistor
SOT-23
1.GATE
2. SOURCE 3. DRAIN
DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
Internal Block Diagram
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039...
