MSN0310W, MORESEMI
MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
● H.
MSN0318W, MORESEMI
MSN0318W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
● H.
MSN0360D, MORESEMI
MSN0360D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V
● High density cell design fo.
