MSN7002
MORESEMI
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N-channel enhancement mode power mos fet.
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MSN7002D - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7002D
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V
● High density cell design .
MSN7002E - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7002E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD R.
MSN7002F - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7002F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V
● High density cell design .
MSN7002Z - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7002Z
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V
● High density cell design .
MSN7004F - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7004F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =4A RDS(ON) <2.3 Ω @ VGS=10V
● High density cell design .
MSN7007F - N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSN7007F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =7A RDS(ON) <1.5 Ω @ VGS=10V
● High density cell design .
MSN014WE - N-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.
MSN014WE - N-Channel MOSFET
(MORESEMI)
MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.
MSN0205 - N-Channel MOSFET
(MORESEMI)
MSN0205
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
●.
MSN0207E - N-Channel MOSFET
(MORESEMI)
MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.