MSN7002E Datasheet, Fet, MORESEMI

MSN7002E Features

• Fet
• VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V
• High power and current handing capability
• Lead free product is acquir

PDF File Details

Part number:

MSN7002E

Manufacturer:

MORESEMI

File Size:

334.21kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mos fet.

TAGS

MSN7002E

MORESEMI

📁 Related Datasheet

MSN7002 - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Le.

MSN7002D - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design .

MSN7002F - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design .

MSN7002Z - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7002Z 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design .

MSN7004F - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7004F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =4A RDS(ON) <2.3 Ω @ VGS=10V ● High density cell design .

MSN7007F - N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSN7007F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =7A RDS(ON) <1.5 Ω @ VGS=10V ● High density cell design .

MSN014WE - N-Channel Enhancement Mode Power MOSFET (MORESEMI)
MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.

MSN014WE - N-Channel MOSFET (MORESEMI)
MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.

MSN0205 - N-Channel MOSFET (MORESEMI)
MSN0205 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ●.

MSN0207E - N-Channel MOSFET (MORESEMI)
MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.