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MT19N10

N-Channel Powe MOSFET

MT19N10 Features

* 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V

* Low gate charge ( typical 14 nC)

* Low Crss ( typical 35 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unl

MT19N10 General Description

These N-Channel enhancement mode power f ield effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-state resistance, provide superior swit ching performance, and wit hstand high energy puls.

MT19N10 Datasheet (1.08 MB)

Preview of MT19N10 PDF

Datasheet Details

Part number:

MT19N10

Manufacturer:

MOS-TECH

File Size:

1.08 MB

Description:

N-channel powe mosfet.

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MT19N10 N-Channel Powe MOSFET MOS-TECH

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