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MT8810

Dual N-Channel Power MOSFET

MT8810 Features

* ! 7.1A, 20V rDS(ON) =0.0Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Bat

MT8810 General Description

This N-ChannelMOSFETisproducedusing0267(&+ Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

MT8810 Datasheet (1.08 MB)

Preview of MT8810 PDF

Datasheet Details

Part number:

MT8810

Manufacturer:

MOS-TECH

File Size:

1.08 MB

Description:

Dual n-channel power mosfet.

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TAGS

MT8810 Dual N-Channel Power MOSFET MOS-TECH

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