M3172
MOSDESIGN
211.93kb
Built-in ir carrier en/decoder.
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M3172F - BUILT-IN IR CARRIER EN/DECODER
(MOSDESIGN)
MOSDESIGN SEMICONDUCTOR CORP.
TAIPEI : TEL : 886-2- 22783733 FAX : 886-2- 22783633
H.K. : TEL : 852- 27569109 FAX : 852- 27566961
EN/DECODER
3-STAT.
M310X - PECL/LVDS/CML
(MTRONPTI)
..
M310x Series
5x7 mm, 3.3/2.5/1.8 Volt, PECL/LVDS/CML, VCXO
Featuring QiK ChipTM Technology Superior Jitter Performance (para.
M3120Sxxx - Multiple Frequency VCXO
(MTRONPTI)
M31x Series Multiple Frequency VCXO
Product Features
• • • • • • • Multiple Output Frequencies (2, 3, or 4) - Selectable QiK ChipTM Technolog.
M3121Sxxx - Multiple Frequency VCXO
(MTRONPTI)
M31x Series Multiple Frequency VCXO
Product Features
• • • • • • • Multiple Output Frequencies (2, 3, or 4) - Selectable QiK ChipTM Technolog.
M3122Sxxx - Multiple Frequency VCXO
(MTRONPTI)
M31x Series Multiple Frequency VCXO
Product Features
• • • • • • • Multiple Output Frequencies (2, 3, or 4) - Selectable QiK ChipTM Technolog.
M312L2828ET0 - DDR SDRAM Registered Module
(Samsung)
256MB, 512MB, 1GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
184pin Registered Module based on 256Mb E-die (x4, x8) with 1,700 / 1,200mil.
M312L2920BG0 - DDR SDRAM Registered Module
(Samsung)
1GB, 2GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
(60FBGA)
184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height .
M312L2920BG0-A2 - DDR SDRAM Registered Module
(Samsung)
1GB, 2GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
(60FBGA)
184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height .
M312L2920BG0-B0 - DDR SDRAM Registered Module
(Samsung)
1GB, 2GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
(60FBGA)
184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height .
M312L2920BG0-CB3 - DDR SDRAM Registered Module
(Samsung)
1GB, 2GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
(60FBGA)
184pin Registered Module based on 512Mb B-die (x4, x8) with 1,200mil Height .