Description
MT3256/S N-Channel 60V/50A Power MOSFET .
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Features
* Max RDS(on)=10mΩ at VGS =10V,ID=25A
* Low gate charge(typical 43 nC)
* Low crss(typical 85pF)
* 100% avalanche tested
Applications
* DC-DC Buck Converters
* Notebook battery power management
* Load Switch im Notebook
MT3256
D
GDS
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS ID
Gate to Source Voltage
Drain Curren
- Continuous (