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MMG600WB065TLA6EN IGBT

MMG600WB065TLA6EN Description

August 2016 MMG600WB065TLA6EN Preliminary 650V 600A 3-Level IGBT Module RoHS Compliant PRODUCT .

MMG600WB065TLA6EN Features

* 650V IGBT3 CHIP(Trench+Field Stop technology)
* Low saturation voltage and positive temperature coefficient
* Low switching losses and short tail current
* Free wheeling diodes with fast and soft reverse recovery

MMG600WB065TLA6EN Applications

* 3-Level applications IGBT ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=60℃, TJm

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