MDP08N055TH - Single N-channel Trench MOSFET

MagnaChip

MDP08N055TH Datasheet Preview — Preview of MDP08N055TH PDF

Datasheet Details

Part number	MDP08N055TH
Manufacturer	MagnaChip
File Size	1.09 MB
Description	Single N-channel Trench MOSFET
Datasheet	MDP08N055TH-MagnaChip.pdf

MDP08N055TH Product details

Description

The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality.

Features

 VDS = 80V  ID = 120 A @VGS = 10V  Very low on-resistance RDS(ON) < 5.5 mΩ @VGS = 10V  175 oC operating temperature  100% UIL Tested  100% Rg Tested  100% △VDS Tested D G DS TO-220 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC TC=25oC TC=100oC.

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Published: Jun 7, 2024 |