Datasheet Details
- Part number
- MDP10N027TH
- Manufacturer
- MagnaChip
- File Size
- 1.00 MB
- Datasheet
- MDP10N027TH-MagnaChip.pdf
- Description
- N-channel MOSFET
MDP10N027TH Description
MDP10N027TH * Single N-Channel Trench MOSFET 100V MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General .
Features
The MDP10N027TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching perform.
MDP10N027TH Applications
* such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 2.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
G
D S
TO-220
Absolute Maximum Ratings (TJ = 25 oC)
Characteristics
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