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MDP10N027TH - N-channel MOSFET

MDP10N027TH Description

MDP10N027TH * Single N-Channel Trench MOSFET 100V MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General .
Features The MDP10N027TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching perform.

MDP10N027TH Applications

* such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 120A @VGS = 10V  Very low on-resistance RDS(ON) < 2.8 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D G D S TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics

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Datasheet Details

Part number
MDP10N027TH
Manufacturer
MagnaChip
File Size
1.00 MB
Datasheet
MDP10N027TH-MagnaChip.pdf
Description
N-channel MOSFET

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N-channel MOSFET MagnaChip
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