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MDP1930 - N-Channel MOSFET

MDP1930 Description

MDP1930 * Single N-Channel Trench MOSFET 80V MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ General .
The MDP1930 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

MDP1930 Features

*  VDS = 80V  ID = 120A @VGS = 10V  RDS(ON) < 2.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25o

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Datasheet Details

Part number
MDP1930
Manufacturer
MagnaChip
File Size
1.10 MB
Datasheet
MDP1930-MagnaChip.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET MagnaChip
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