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MDU1512 - N-Channel Trench MOSFET

Description

The MDU1512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1512 is suitable device for DC to DC converter and general purpose applications.

Features

  • VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 3.4mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characte.

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Datasheet Details

Part number MDU1512
Manufacturer MagnaChip
File Size 724.40 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDU1512 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU1512 – Single N-Channel Trench MOSFET 30V MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mΩ General Description The MDU1512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1512 is suitable device for DC to DC converter and general purpose applications. Features VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 3.4mΩ @VGS = 10V < 5.0mΩ @VGS = 4.
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