MDU5512 Dual N-Channel Trench MOSFET

MagnaChip

Description

MDU5512 - Dual N-Channel Trench MOSFET 30V MDU5512 Dual Asymmetric N-channel Trench MOSFET 30V General .
The MDU5512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excell.

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Datasheet Specifications

Part number: MDU5512
Manufacturer: MagnaChip
File Size: 1.42 MB
Datasheet: MDU5512-MagnaChip.pdf
Description: Dual N-Channel Trench MOSFET

Features

* FET1 FET2  VDS = 30V  ID = 46.1A VDS = 30V ID = 80A @VGS = 10V  RDS(ON) < 8.9mΩ < 12.5mΩ < 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 6 S2 S2 7 G2 8 4 1 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-

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MDU5512 Dual N-Channel Trench MOSFET MagnaChip

MagnaChip MDU5512-like datasheet