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MDU5593S Dual N-Channel Trench MOSFET

MDU5593S Description

MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General .
The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excel.

MDU5593S Features

* FET1 FET2  VDS = 30V  ID = 34A VDS = 30V ID = 40A @VGS = 10V  RDS(ON) < 8.0mΩ < 11.0mΩ < 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 6 S2 S2 7 G2 8 1 2 3 4 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-So

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Datasheet Details

Part number
MDU5593S
Manufacturer
MagnaChip
File Size
1.45 MB
Datasheet
MDU5593S-MagnaChip.pdf
Description
Dual N-Channel Trench MOSFET

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Dual N-Channel Trench MOSFET MagnaChip
MagnaChip MDU5593S-like datasheet