SLF10N60U Datasheet - Maple Semiconductor

SLF10N60U N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF10N60U Features

* - 10A, 600V, RDS(on) typ. = 0.68Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60U SLF10N60U VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF10N60U-MapleSemiconductor.pdf