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SLF10N60U

N-Channel MOSFET

SLF10N60U Features

* - 10A, 600V, RDS(on) typ. = 0.68Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60U SLF10N60U VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF10N60U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF10N60U Datasheet (344.79 KB)

Preview of SLF10N60U PDF

Datasheet Details

Part number:

SLF10N60U

Manufacturer:

Maple Semiconductor

File Size:

344.79 KB

Description:

N-channel mosfet.

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TAGS

SLF10N60U N-Channel MOSFET Maple Semiconductor

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