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SLF4N65C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLF4N65C Features

* - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDS

SLF4N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF4N65C Datasheet (298.21 KB)

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Datasheet Details

Part number:

SLF4N65C

Manufacturer:

Maple Semiconductor

File Size:

298.21 KB

Description:

N-channel mosfet.

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SLF4N65C N-Channel MOSFET Maple Semiconductor

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