SLF4N65UZ

N-Channel MOSFET

Maple Semiconductor

SLF4N65UZ Features

* - 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF4N65UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF4N65UZ Datasheet (1.76 MB)

SLF4N65UZ Datasheet Preview — Preview of SLF4N65UZ PDF

Datasheet Details

Part number:

SLF4N65UZ

Manufacturer:

Maple Semiconductor

File Size:

1.76 MB

Description:

N-channel mosfet.

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SLF4N65UZ N-Channel MOSFET Maple Semiconductor

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SLF4N65UZ Features

SLF4N65UZ General Description

Datasheet Details

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Description:

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