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SLF8N65U

N-Channel MOSFET

SLF8N65U Features

* - 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

SLF8N65U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF8N65U Datasheet (318.22 KB)

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Datasheet Details

Part number:

SLF8N65U

Manufacturer:

Maple Semiconductor

File Size:

318.22 KB

Description:

N-channel mosfet.

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SLF8N65U N-Channel MOSFET Maple Semiconductor

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