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SLU50R550SJ

N-Channel MOSFET

SLU50R550SJ Features

* - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550S

SLU50R550SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLU50R550SJ Datasheet (632.79 KB)

Preview of SLU50R550SJ PDF

Datasheet Details

Part number:

SLU50R550SJ

Manufacturer:

Maple Semiconductor

File Size:

632.79 KB

Description:

N-channel mosfet.

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SLU50R550SJ N-Channel MOSFET Maple Semiconductor

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