ME20P06-G, ME20P06 Datasheet - Matsuki

ME20P06-G P-Channel MOSFET

The ME20P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME20P06-G Features

* RDS(ON)≦78mΩ@VGS=-10V

* RDS(ON)≦100mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display invert

ME20P06-Matsuki.pdf

ME20P06-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME20P06-G, ME20P06. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME20P06-G, ME20P06

Manufacturer:

Matsuki

File Size:

1.16 MB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME20P06-G, ME20P06.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME20P06 P-Channel MOSFET (Matsuki)

ME20P06P P-Channel MOSFET (Matsuki)

ME20P06P-G P-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (VBsemi)

ME20P03-G P-Channel MOSFET (Matsuki)

ME20P03F P-Channel MOSFET (Matsuki)

ME20P03F-G P-Channel MOSFET (Matsuki)

TAGS

ME20P06-G ME20P06 P-Channel MOSFET Matsuki

ME20P06-G Distributor