ME25N15-G, ME25N15 Datasheet - Matsuki

ME25N15-G N-Channel MOSFET

The ME25N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME25N15-G Features

* RDS(ON) ( typ) 60mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View

* The

ME25N15-Matsuki.pdf

ME25N15-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME25N15-G, ME25N15. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME25N15-G, ME25N15

Manufacturer:

Matsuki

File Size:

1.14 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME25N15-G, ME25N15.
Please refer to the document for exact specifications by model.

ME25N15-G Distributor

📁 Related Datasheet

ME25N15 N-Channel MOSFET (Matsuki)

ME25N15AL N-Channel MOSFET (Matsuki)

ME25N15AL-G N-Channel MOSFET (Matsuki)

ME25N15F N-Channel MOSFET (Matsuki)

ME25N15F-G N-Channel MOSFET (Matsuki)

ME25N10F N-Channel MOSFET (Matsuki)

ME25N10F-G N-Channel MOSFET (Matsuki)

ME25N10T N-Channel MOSFET (Matsuki)

TAGS

ME25N15-G ME25N15 N-Channel MOSFET Matsuki