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ME25N10F N-Channel MOSFET

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Description

ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME25N10F
Manufacturer
Matsuki
File Size
928.47 KB
Datasheet
ME25N10F-Matsuki.pdf
Description
N-Channel MOSFET

Features

* RDS(ON)≦85mΩ@VGS=10V
* RDS(ON)≦105mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-220F) Top View
* The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source V

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