ME25N10T - N-Channel MOSFET

Datasheet Summary

Description

The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦85mΩ@VGS=10V.
RDS(ON)≦105mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Matsuki

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Datasheet Details

Part number	ME25N10T
Manufacturer	Matsuki
File Size	0.96 MB
Description	N-Channel MOSFET
Datasheet	ME25N10T Datasheet
Additional preview pages of the ME25N10T datasheet.

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Full PDF Text Transcription

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ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=4.

Published: Mar 21, 2018 |