Description
ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* RDS(ON)≦85mΩ@VGS=10V
* RDS(ON)≦105mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(TO-220F) Top View
* The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source V