ME2N70023E1-G Datasheet (Matsuki)

ME2N70023E1-G, N-Channel MOSFET

The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application s

ME2N70023E1-G Features

* RDS(ON) ≦4Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* ESD Protection HBM≧1KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management in Note book