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ME2N70023E1-G N-Channel MOSFET

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Description

N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd .
The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME2N70023E1-G
Manufacturer
Matsuki
File Size
2.32 MB
Datasheet
ME2N70023E1-G-Matsuki.pdf
Description
N-Channel MOSFET

Features

* RDS(ON) ≦4Ω@VGS=10V
* RDS(ON) ≦4Ω@VGS=4.5V
* ESD Protection HBM≧1KV
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
* Th Orderin

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