ME2N70023E1-G - N-Channel MOSFET

Name: ME2N70023E1-G
SKU: ME2N70023E1-G-1252072

Matsuki

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Datasheet Details

Part number	ME2N70023E1-G
Manufacturer	Matsuki
File Size	2.32 MB
Description	N-Channel MOSFET
Datasheet	ME2N70023E1-G-Matsuki.pdf

ME2N70023E1-G Product details

Description

The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON) ≦4Ω@VGS=10V.
RDS(ON) ≦4Ω@VGS=4.5V.
ESD Protection HBM≧1KV.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.

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Published: Mar 20, 2018 |