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ME2N70023E1-G

N-Channel MOSFET

ME2N70023E1-G Features

* RDS(ON) ≦4Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* ESD Protection HBM≧1KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management in Note book

ME2N70023E1-G General Description

The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

ME2N70023E1-G Datasheet (2.32 MB)

Preview of ME2N70023E1-G PDF

Datasheet Details

Part number:

ME2N70023E1-G

Manufacturer:

Matsuki

File Size:

2.32 MB

Description:

N-channel mosfet.

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TAGS

ME2N70023E1-G N-Channel MOSFET Matsuki

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