ME2N7002D Datasheet (Matsuki)

ME2N7002D, N-Channel MOSFET

The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME2N7002D Features

* Simple Drive Requirement

* Small Package Outline

* ROHS Compliant

* ESD Rating = 2000V HBM Mechanical data

* High density cell design for low RDS(ON)

* Voltage controlled small signal switching.

* Rugged and reliable.

* High saturation current capability.

* High