ME2N7002DA Datasheet (Matsuki)

ME2N7002DA, N-Channel MOSFET

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME2N7002DA Features

* RDS(ON) ≦4Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Ba