Datasheet Details
Part number:
ME2N7002DA-G, ME2N7002DA
Manufacturer:
Matsuki
File Size:
873.84 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2N7002DA-G, ME2N7002DA.
Please refer to the document for exact specifications by model.
ME2N7002DA-G, ME2N7002DA, N-Channel MOSFET
The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME2N7002DA-G Features
* RDS(ON) ≦4Ω@VGS=10V
* RDS(ON) ≦4Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Ba
📁 Related Datasheet
📌 All Tags
