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ME2N7002DA-G

N-Channel MOSFET

ME2N7002DA-G Features

* RDS(ON) ≦4Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Ba

ME2N7002DA-G General Description

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME2N7002DA-G Datasheet (873.84 KB)

Preview of ME2N7002DA-G PDF

Datasheet Details

Part number:

ME2N7002DA-G

Manufacturer:

Matsuki

File Size:

873.84 KB

Description:

N-channel mosfet.

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TAGS

ME2N7002DA-G N-Channel MOSFET Matsuki

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