ME4174-G, ME4174 Datasheet - Matsuki

ME4174-G N-Channel 30V (D-S) MOSFET

The ME4174 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME4174-G Features

* RDS(ON)≦6.2mΩ@VGS=10V

* RDS(ON)≦11mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/DC

ME4174-Matsuki.pdf

ME4174-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4174-G, ME4174. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4174-G, ME4174

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

N-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4174-G, ME4174.
Please refer to the document for exact specifications by model.

ME4174-G Distributor

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ME4174-G ME4174 N-Channel 30V D-S MOSFET Matsuki